Provided is an aluminum precursor for thin-film deposition having a structure of formula (I) or (II), wherein R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, R.sub.6, and R.sub.7 each independently represent a hydrogen atom, C.sub.1.about.C.sub.6 alkyl, halo-C.sub.1.about.C.sub.6 alkyl, C.sub.2.about.C.sub.5 alkenyl, halo-C.sub.2.about.C.sub.5 alkenyl, C.sub.3.about.C.sub.10 cycloalkyl, halo-C.sub.3.about.C.sub.10 cycloalkyl, C.sub.6.about.C.sub.10 aryl, halo-C.sub.6.about.C.sub.10 aryl or --Si(R.sub.0).sub.3, and wherein R.sub.0 is C.sub.1.about.C.sub.6 alkyl or halo-C.sub.1.about.C.sub.6 alkyl. According to the present invention, based on the interaction principle between molecules, aluminum precursors for thin-film deposition are provided, which have a good thermal stability, are not susceptible to decomposition and convenient for storage and transportation, have good volatility at a high temperature, and are excellent in film formation. ##STR00001##