37results about How to "The reaction environment is stable" patented technology

The invention discloses a silicon carbon composite material, and a preparation method and an application thereof. The preparation method comprises the following steps of performing wet process ball milling on glass powder and a laminated layer carbon material to obtain a uniform mixed product of glass and the carbon material; next, performing uniform mixing and compacting on the product and magnesium powder and fused salt to form an ingot; and then performing a magnesium thermal reaction, and carrying out acid washing on the reaction product to obtain a sandwich layer-shaped porous silicon/graphene-like structured composite material. The preparation method are simple in steps and easy to implement, and the raw materials are wide in resource; more importantly, the mixture is made into the ingot through the compacting process, and then the magnesium thermal reaction is performed, so that the tap density of the silicon carbon negative electrode material is greatly improved, and the volumetric specific capacity of the negative electrode material is improved; meanwhile, by compounding with the graphite and other carbon material to form the sandwich-like structure, the electronic conductivity of the material is improved effectively, and the compatibility between the silicon base material and an electrolyte can be improved, thereby improving cycle performance and rate capability of the material; and therefore, the silicon carbon composite material can be applied to the negative electrode material with high power density and high energy density of the lithium ion battery.

The invention discloses a microfluidic chip. The microfluidic chip comprises a substrate and a bottom cover, wherein a sample inlet, a diluent chamber, a detection chamber and a mixing area are arranged on the substrate; the mixing area comprises a reagent chamber, an air chamber and a uniform mixing chamber; the sample inlet, the diluent chamber and the uniform mixing area are communicated through a first flow passage; the detection chamber is communicated with the uniform mixing chamber through a second flow passage; the reagent chamber is communicated with the uniform mixing chamber through a reagent flow channel; the air chamber is communicated with the uniform mixing chamber through an air channel; a light transmitting panel is arranged on the upper surface of the detection chamber, a light transmitting bottom plate is arranged on the lower surface, and a light transmitting side plate is arranged on the side surface. By means of the microfluidic chip, all reagent components required for a reaction can be integrated onto the chip and do not contact with the outside during the reaction, so that the risk of contamination is greatly reduced; the microfluidic chip is used for detecting the content of to-be-detected components in a sample; reaction time is short, sensitivity is quite high and quantitation is accurate.

Being suitable for forming trench in substrate, the method includes steps: carrying out first etching step for the substrate under first etching condition; carrying out second etching step for the substrate under second etching condition; carrying out a conversion step between the first etching step and second etching step in order to adjust one of environmental parameters such as pressure condition in reaction chamber, gas flow, source power of plasma or temperature of reaction chamber; moreover, making variance of environmental parameters between etching step and conversion step be les than 15úÑ in order to maintain stabilized environment for reaction, and to avoid dropping off fine dust. Afterwards, when cleaning step of oxygen plasma is carried out, pressure in reaction chamber is raised to 40mTorr -80mTorr so as to prevent generation of spheroidal defect.

The invention relates to a preparation method of a hierarchical-structure thin-wall BN microtube. The preparation method mainly comprises the following steps: putting a boron-containing precursor intoa tube furnace, introducing nitriding reaction gas, carrying out heating to 1000-1200 DEG C, and keeping the temperature for 2 hours or more to obtain a large batch of high-quality one-dimensional boron nitride hierarchical-structure materials. According to the method, a substrate is not needed; the preparation method is simple and effective in process and low in energy consumption and uses cheapand non-toxic raw materials; and the purity of a purified target product is high, which is favorable for batch production of the boron nitride micro-nano hierarchical structure materials.

The invention discloses a method for preparing nano-silicon carbide by using silicate-based glass as a raw material. The method comprises the following steps: carrying out mechanical ball milling on glass; carrying out uniform ball milling and mixing on the ball-milled powdery glass, magnesium powder, coal tar and molten salt according to a certain proportion, and placing into a container for reaction under inert gas; then pickling the reaction product to obtain nano-silicon carbide. The method disclosed by the invention has the advantages that steps are simple and easy and the source of raw materials is wide; further, the Mg-containing molten salt is added as a heat absorbent to control the reaction temperature and increase the solubility and wettability of magnesium so as to enable the reaction to be more sufficient and the reactants not to agglomerate easily. The three-dimensional porous silicon carbide prepared by the method has the advantages of relatively high purity, uniform particle, high specific surface area (180-260m<2>/g), rich mesoporous structure and the like, and has wide application prospects in the aspects of radiation resistance, radiation resistance and wave absorption.

The invention discloses a liquid adding device. The liquid adding device comprises a card pushing assembly and a liquid adding assembly; the card pushing assembly comprises a positioning base plate and a pushing mechanism, and a plurality of gold sample cards are distributed on the positioning base plate in an axial direction; the pushing mechanism automatically pushes the gold sample cards to axially move along the positioning base plate; the liquid adding assembly comprises a liquid adding needle arranged above the positioning base plate; and one end of the liquid adding needle is connectedwith a liquid inlet pipe, and the other end is used for adding liquid to the gold sample card which is moved to the space just below the liquid adding needle. The invention provides the automatic liquid adding device which can realize rapid and accurate liquid adding as well as can realize isolation of an operator and a sample.

The invention provides an acidification plug removal system based on a deep eutectic solvent. Specifically, the scale inhibitor is obtained by mixing the following raw materials in parts by mole: 9 to 11 parts of hexamethylenetetramine, 9 to 11 parts of D-sodium gluconate, 9 to 11 parts of sodium polyepoxysuccinate, 9 to 11 parts of polyaspartic acid, 7 to 9 parts of sodium ethylenediamine tetramethylene phosphonate, 6 to 9 parts of ethanol, 4 to 6 parts of rhamnolipid, 4 to 6 parts of benzotriazole and 4 to 7 parts of MA-AA polymer. The scale inhibitor, hydrochloric acid and villiaumite are mixed according to the total mole number ratio of 1: (2-4): (1-2) to form a solute, then the solute formed by mixing the scale inhibitor and the villiaumite is dissolved in a deep eutectic solvent, the novel plug removal system is obtained, and the total mole number ratio of the deep eutectic solvent to the solute formed by the villiaumite, the hydrochloric acid and the scale inhibitor is (0.01-0.5): 1. The deep eutectic solvent can control the strong acidity of hydrochloric acid, delay the intense reaction effect of a rock stratum and an acid liquid system, fully exert the solvent effect of the deep eutectic solvent, reduce the generation of precipitates and improve the plug removal efficiency.

The invention provides a two-dimensional material, a two-dimensional material alloy and a two-dimensional material heterojunction preparation method, and belongs to the technical field of two-dimensional material preparation. A metal film or a metal oxide film is prepared on a silicon wafer through a thermal evaporation coating method to serve as a precursor film, the silicon wafer plated with the precursor film and a substrate are placed in an evaporation boat in a face-to-face mode, the precursor film is vulcanized through a chemical vapor deposition method, and the two-dimensional transition metal chalcogenide grows on the substrate. The two-dimensional material with controllable thickness and size can be obtained by changing the thickness of the precursor film and the face-to-face distance between the silicon wafer and the substrate. The preparation method provided by the invention is universally suitable for growth of two-dimensional materials including two-dimensional transition metal selenium compounds and two-dimensional transition metal tellurium compounds, can be used for preparation of two-dimensional material alloys and heterostructure materials, and is simple in preparation process, high in repeatability and suitable for industrial production. The controllability and the stability of the two-dimensional material in the growth process can be effectively improved.

The invention discloses a CVI/CVD process tail gas recovery device and method, wherein the device includes a cooling filter device, a vacuum pump, an isothermal cracking furnace and a post comprehensive treatment device; the cooling filter device comprises a circulating liquid cooling module, an oil filter and a drying filter; a preheating zone module is arranged at the bottom of the interior of the isothermal cracking furnace, and an isothermal zone module is arranged above the preheating zone module. The preheating zone module is a multilayer labyrinth graphite plate. The lower part of the isothermal zone module is a delay buffer zone, the upper part of the isothermal zone module is an upper cavity of the isothermal zone, and the upper cavity of the isothermal zone is provided with a multilayer graphite plate structure; the graphite plate is provided with an active carbon growth structure, and the surface of the active carbon growth structure is provided with a carbon black catalyst.The top of the isothermal cracking furnace is provided with a gas outlet, and the gas outlet is connected with the post comprehensive treatment device through a pipeline. The later comprehensive treatment device includes a pressure swing separator and a solid filter. The invention provides the CVI/CVD process tail gas recovery device and method with high treatment efficiency, good safety performance and high ecological environment friendliness.

The invention discloses an aqueous dismutase generating device. The aqueous dismutase generating device comprises a touch panel fixedly mounted on one edge of the outer side surface of a cover body, wherein a wireless charger is arranged on the edge, on which the touch panel is located, of the cover body, and a plurality of rotary flushing heads are fixedly mounted on one side surface, far from the wireless charger, of the cover body and are connected with an automatic water inlet valve through a rotary water inlet pipe; one end, far from the rotary flushing heads, of the rotary water inlet pipe penetrates through a heat-preservation tank body; the automatic water inlet valve is arranged outside the heat-preservation tank body; and a semiconductor chilling plate is fixedly mounted on one side of the rotary water inlet pipe located in the heat-preservation tank body. A water-level sensor and the rotary flushing heads are additionally arranged to precisely control the water amount in a reaction bin, so that an aqueous dismutation process is stabilized, the uniform speed is guaranteed, and the yield is stable.

The invention discloses a polycarboxylic acid slump retaining agent modified by a phenyl hydroxyl composite ATRP method and a preparation method thereof. In the preparation process, firstly 5-10 partsof benzene rings, 7-16 parts of hydroxyl monomers, 0.7-1.6 parts of ligands, 0.02-0.1 part of a catalyst, 3-5 parts of an emulsifier and 300 parts of water are added into a first reaction kettle, and1.1-2.2 parts of an initiator is dropwise added protectively at the inert atmosphere of 80-95 DEG C to prepare a block polymer I; a polyether macromonomer and alkyl acrylate are dropwise added into the block polymer I to react at 55-70 DEG C and keep the temperature to prepare a polymer II; and liquid caustic soda with the mass fraction of 30% is added into the polymer II until the pH value of the reaction system is about 10 and the temperature is kept at 60 DEG C until the pH value of the system is stable to obtain the polycarboxylic acid slump retaining agent. The prepared polycarboxylic acid slump retaining agent is narrow in molecular mass distribution gradient, high in effective component content and excellent in performance and has high dispersity and slump retaining property, and the slump retaining agent is endowed with additional water reducing capacity due to the hydration inhibition capacity of hydroxyl.