2results about How to "Simple repair process" patented technology

The application discloses a kind of reaction sintered silicon carbide ceramic surface small hole defect repair method and reaction sintered silicon carbide ceramic, belong to silicon carbide ceramic technical field.The repair method of the present application includes: silicon carbide ceramic electrically conductive sintering treatment and small hole defect repair step, first silicon is filled between silicon carbide grain to form a kind of SiC / Si composite reaction sintered silicon carbide ceramic, so that the traditional non-conductive silicon carbide ceramic obtains conductivity, so that silicon carbide ceramic has the characteristics of direct brush plating, then the small hole defect on the surface of reaction sintered silicon carbide ceramic is repaired by brush plating, realizes the accurate filling of the small hole defect on the surface of reaction sintered silicon carbide ceramic, the whole repair process is carried out at room temperature, fundamentally avoids the risk of mechanical property decline and thermal crack caused by secondary high-temperature treatment.

This invention discloses a room-temperature curing high-temperature, high-emissivity coating, formed by spraying a coating containing fillers and a film-forming agent. The fillers include black silicon carbide, molybdenum silicide, and praseodymium oxide-modified tantalum silicide. The film-forming agent is polysiloxane reinforced with nano-silicon carbide whiskers. The filler content in the coating is 70%–80% by mass. This invention also discloses a method for preparing the above-mentioned room-temperature curing high-temperature, high-emissivity coating, comprising uniformly mixing the film-forming agent, fillers, and organic solvent to obtain a coating; spraying the coating onto the surface of a substrate and curing at room temperature for 48–72 hours to obtain the room-temperature curing high-temperature, high-emissivity coating. The high-temperature, high-emissivity coating of this invention can be prepared at room temperature and used at high temperatures, with a maximum operating temperature of 1650℃ and a high-temperature emissivity of 0.88–0.90, which has important guiding significance for the research of high-temperature radiation heat dissipation coatings.