4results about How to "Simple repair process" patented technology

The invention discloses a display panel circuit repairing method and device, electronic equipment and a storage medium, and the method comprises the steps: determining the disconnection width of an open-circuit region when the open-circuit region of a circuit in a display panel is detected, determining the deposition width according to the disconnection width, enabling the open-circuit region to be fully filled if the deposition width is greater than the disconnection width, and improving the circuit repairing efficiency. The repair success rate is improved; a metal deposition process is carried out on the open circuit area based on the deposition width, so that the open circuit area is filled with metal, the circuit is in a connected state, the metal is conductive metal, and the filling thickness of the metal is smaller than or equal to the thickness of the circuit; according to the method, a thin metal film can be generally formed on the upper surface of the circuit without forming a bulge with a large volume, so that the influence on the arrangement position of a structural layer can be avoided while the circuit is repaired, the repair process of the circuit is simplified, the repair cost is reduced, and meanwhile, the panel yield is also improved.

The invention discloses a normal-temperature curing high-temperature high-radiation coating which is formed by spraying a coating containing a filler and a film forming matter, the filler comprises black silicon carbide, molybdenum silicide and praseodymium oxide modified tantalum silicide; the film forming matter is nano silicon carbide whisker reinforced polysilazane; and the mass percent of the filler in the coating is 70-80%. The invention further discloses a preparation method of the normal-temperature-curing high-temperature high-radiation coating. The preparation method comprises the following steps: uniformly mixing the film forming matter, the filler and the organic solvent to obtain a coating; and spraying the coating on the surface of a base material, and curing at room temperature for 48-72 hours to obtain the room-temperature-cured high-temperature high-radiation coating. The high-temperature and high-radiation coating can be prepared at room temperature and used at high temperature, the highest use temperature reaches 1650 DEG C, the high-temperature emissivity reaches 0.88-0.90, and the high-temperature and high-radiation coating has important guiding significance in research of high-temperature radiation heat dissipation coatings.

The application discloses a kind of reaction sintered silicon carbide ceramic surface small hole defect repair method and reaction sintered silicon carbide ceramic, belong to silicon carbide ceramic technical field.The repair method of the present application includes: silicon carbide ceramic electrically conductive sintering treatment and small hole defect repair step, first silicon is filled between silicon carbide grain to form a kind of SiC / Si composite reaction sintered silicon carbide ceramic, so that the traditional non-conductive silicon carbide ceramic obtains conductivity, so that silicon carbide ceramic has the characteristics of direct brush plating, then the small hole defect on the surface of reaction sintered silicon carbide ceramic is repaired by brush plating, realizes the accurate filling of the small hole defect on the surface of reaction sintered silicon carbide ceramic, the whole repair process is carried out at room temperature, fundamentally avoids the risk of mechanical property decline and thermal crack caused by secondary high-temperature treatment.

This invention discloses a room-temperature curing high-temperature, high-emissivity coating, formed by spraying a coating containing fillers and a film-forming agent. The fillers include black silicon carbide, molybdenum silicide, and praseodymium oxide-modified tantalum silicide. The film-forming agent is polysiloxane reinforced with nano-silicon carbide whiskers. The filler content in the coating is 70%–80% by mass. This invention also discloses a method for preparing the above-mentioned room-temperature curing high-temperature, high-emissivity coating, comprising uniformly mixing the film-forming agent, fillers, and organic solvent to obtain a coating; spraying the coating onto the surface of a substrate and curing at room temperature for 48–72 hours to obtain the room-temperature curing high-temperature, high-emissivity coating. The high-temperature, high-emissivity coating of this invention can be prepared at room temperature and used at high temperatures, with a maximum operating temperature of 1650℃ and a high-temperature emissivity of 0.88–0.90, which has important guiding significance for the research of high-temperature radiation heat dissipation coatings.