This application relates to the field of high-purity
semiconductor materials, specifically to a method for preparing ultra-high purity
tungsten wire. The method includes the following steps: Step S1:
Cutting ultra-high purity
tungsten rods with a
diameter of 19-21 mm from an ultra-high purity
tungsten plate; Step S2: Performing high-temperature heat treatment on the ultra-high purity tungsten rods from Step S1, followed by continuous heating-rotary
forging, and repeating the heating-rotary
forging process to obtain pretreated ultra-high purity tungsten rods; Step S3: Sequentially subjecting the pretreated ultra-high purity tungsten rods from Step S2 to a process of attaching
graphite emulsion, heating, and drawing to obtain black tungsten wire, repeating the
graphite emulsion, heating, and drawing process, followed by electrolytic
polishing to obtain ultra-high purity tungsten wire. This application uses a 7N-grade ultra-high purity tungsten plate prepared by
chemical vapor deposition (CVD) to prepare high-purity tungsten wire. The ultra-high purity tungsten rods are first subjected to high-temperature heat treatment, followed by continuous heating-rotary
forging, and then finely drawn. The drawing method of this application ensures the purity and excellent performance of the tungsten wire.