This invention provides a
semiconductor device based on encapsulated
graphene nanoribbons and its fabrication method. The
semiconductor device includes: a substrate, encapsulated
graphene nanoribbons located thereon, and corresponding
metal electrodes. The encapsulated
graphene nanoribbons includes: an insulating encapsulation with atomic-level flatness, the insulating encapsulation being formed by at least two atomic
layers stacked in parallel, with adjacent atomic
layers bonded by van der Waals forces; at least one longitudinal section extending along the thickness direction of the insulating encapsulation; and at least one graphene nanoribbon, which breaks through the van der Waals forces of any two adjacent atomic
layers exposed on the longitudinal section and embeds itself between the two atomic layers. The
graphene nanoribbons used in this
semiconductor device are encapsulated in an insulating encapsulation with atomic-level flatness, isolating them from the external environment, thus giving them properties close to those of intrinsic nanoribbons, resulting in high-quality, high-performance carbon-based electronic devices. Furthermore, the fabrication method is simple, low-cost, and can be
mass-produced.