34results about How to "Improve thermomechanical properties" patented technology

The invention relates to a double-ring silicon through silicon via structure and a manufacturing method thereof. The double-ring silicon through silicon via structure comprises a semiconductor substrate, a first dielectric layer, a first metal ring, a second dielectric layer, a second metal ring and a dielectric core layer sequentially from outside to inside. The manufacturing method of the double-ring silicon through silicon via structure includes: (1) forming a through via in the semiconductor substrate by etching; (2) preparing the first dielectric layer on the inner surface of the through via; (3) preparing the first metal ring on the surface of the first dielectric layer; (4) preparing the second dielectric layer on the surface of the first metal ring; (5) preparing the second metal ring on the surface of the second dielectric layer; (6) preparing the dielectric core layer on the surface of the second metal ring until fullness is achieved; (7) performing chemical mechanical polishing on the upper surfaces of the semiconductor substrate and the through silicon via. By adoption of the first metal ring which is arranged outside and grounded, a function of shielding noise signals is realized, and high integrity of high-frequency signals is achieved; by adoption of the second metal ring arranged inside, thermal stress is reduced, and thermo-mechanical property is improved.