3results about How to "No reaction" patented technology

The present application relates to a kind of full van der waals transfer single crystal dielectric memristor and its preparation method, the single crystal dielectric memristor includes substrate, lower electrode, antimony trioxide dielectric layer and upper electrode from bottom to top;The lower electrode, antimony trioxide dielectric layer and upper electrode form MIM structure.The surface of dielectric layer material of the present application has no dangling bond, reduces the defect with electrode interface;The dielectric material is easy to prepare, maintains higher thickness uniformity;When the dielectric material is deposited on germanium-based graphene, single crystal of out-of-plane 111 orientation is formed, which is beneficial to improve the performance of memristor.The preparation process of the present application is integrated by van der waals force (physical stacking) rather than chemical bonding, which can construct a pure interface theoretically without defects, diffusion and reaction;The process is transferred at room temperature throughout, compatible with flexible substrate, providing a new path for flexible electronics and three-dimensional integration.

This invention relates to the technical field of elevator buffers, and discloses an eddy current damping energy-dissipating elevator buffer. The invention includes an outer buffer tube and a mounting chamber formed within the outer buffer tube. This invention achieves the effect of a novel buffer through a stationary / moving component, making it suitable for elevators at any speed. Its damping force increases with speed, thereby improving the buffering effect. The eddy current damping characteristic enables a rebound-free buffering process. The eddy current damping force moves in the opposite direction to the moving component, preventing the moving component from rising again. Furthermore, the eddy current damping force itself is a dissipative damping force, preventing the generation of reaction force and achieving a smooth buffering process. A reset component ensures smooth buffer movement and post-movement reset. Simultaneously, the buffer stroke is short, and the pit depth is shallow, saving installation space.

The invention belongs to the technical field of surface modification of materials, and particularly relates to an aluminum-lithium alloy surface chemical passivation process and an obtained passivated aluminum-lithium alloy. The process comprises the step of passivating the surface of the aluminum-lithium alloy by adopting a multi-coating method and a high-temperature heat treatment method, a coating agent adopted by the coating method comprises graphite, graphene or graphene oxide; the adding amount of the coating agent is 2-5% of the mass of the aluminum-lithium alloy; the conditions of the high-temperature treatment method are as follows: the temperature is 500-660 DEG C, and the time is 3-9 hours. The aluminum-lithium alloy is subjected to coating and high-temperature heat treatment by adopting a proper coating agent, so that a protective layer is formed on the surface of the aluminum-lithium alloy, passivation treatment of the aluminum-lithium alloy is realized, and the stability of the aluminum-lithium alloy is further improved. Through detection, the passivated aluminum-lithium alloy obtained after passivating treatment does not react with water.