The invention belongs to the field of
metal oxide semiconductor-gas sensing, and particularly relates to a defect-state Fe2O3 (at) WO3
semiconductor gas-sensitive material, a preparation method and application, the sensing material comprises Fe2O3 and WO3, Fe2O3 nanoparticles are modified on the surface of WO3,
oxygen vacancy is constructed on the surface of Fe2O3 in situ, and in the H2S sensing process, the Fe2O3 nanoparticles are modified on the surface of the WO3, and in the H2S sensing process, the defect-state Fe2O3 (at) WO3
semiconductor gas-sensitive material is obtained.
Oxygen vacancies may be continuously generated in situ to ameliorate the toxic effects of
chalcogenide on the material. The defect-state Fe2O3 (at) WO3 sensing material is prepared through an impregnation
calcination-in-situ reduction method, the two components are tightly combined, the interaction is remarkable, and the transmission capacity of electrons is improved; according to the present invention, the in-situ generated
oxygen vacancy during the H2S sensing process can provide more active sites, the adsorption capacity of the target gas H2S is enhanced, the H2S
reaction path is modulated, the excellent H2S sensing response performance and the extremely low
detection limit (1ppb) are represented, and the good foundation is laid for the development of the novel
metal oxide semiconductor.