The application discloses a
perovskite solar cell based on
trimethylsilyl methanesulfonate modification and a preparation method thereof. The
cell comprises an
anode substrate, an
electron transport layer, a buried bottom interface modification layer, a
perovskite light
absorption layer, a top interface modification layer, a
hole transport layer and a
cathode layer. The
electron transport layer is SnO2 modified by
ammonium tartrate (AT) and
nitric acid (HNO3), and the
perovskite light
absorption layer is CsPbI2Br.
Trimethylsilyl methanesulfonate (TMSEs) is used as the buried bottom interface modification layer to modify the interface between the SnO2
electron transport layer and the CsPbI2Br perovskite light
absorption layer, to construct a molecular bridge on the interface, to passivate the defects of the SnO2 / CsPbI2Br interface, to inhibit the non-radiative recombination of the interface, and to improve the room-temperature black-
phase stability of the CsPbI2Br perovskite film, thereby improving the performance of the
perovskite solar cell device. The method has low cost, is simple and easy to operate, is suitable for the preparation of large-scale perovskite solar cells, and has important research and application values.