The invention discloses an organic field effect transistor (FET), as well as a special source-drain electrode and a preparation method thereof. The organic FET with an electrode structure comprises a gate electrode, a dielectric layer, an organic semiconductor layer, a source electrode and a drain electrode, wherein the source electrode and the drain electrode are patterned Graphene electrodes. The method for preparing the patterned Graphene electrodes comprises the following steps: 1) a metal film is deposited on a substrate and is patterned; and 2) the substrate on which the patterned metal film is deposited is placed in a chemical vapor deposition system, and chemical vapor Graphene deposition is performed on the surface of a patterned metal electrode material, so as to obtain the patterned Graphene electrodes, wherein a carbon source used in chemical vapor deposition is methanol, ethanol, propanol, pentanol, benzene, toluene, xylene, methane and the like.