The invention relates to a method for improving a metallurgical-method polycrystalline silicon growth interface. The method comprises the steps: (1) loading polycrystalline-silicon silicon materials to a high-purity quartz crucible, placing the high-purity quartz crucible into a directional solidification furnace, and carrying out vacuumizing until the internal degree of vacuum of the furnace is lower than 10Pa; (2) heating the temperature of the furnace to 1,450 DEG C to 1,550 DEG C so as to melt the silicon materials; (3) carrying out external-field treatment on the silicon materials for 10 to 30 minutes at the magnetic intensity of 0.15T to 0.5T, then, cooling the furnace body at the rate of 5 DEG C/min to 10 DEG C/min, downwards shifting a moving part of the furnace body at the rate of 5mm/h to 10mm/h, enabling silicon melt to be divorced from a heater and start to grow crystals, and closing a magnetic field when the temperature is 1,100 DEG C to 1,200 DEG C; and (4) after crystal growth, enabling the moving part of the furnace body to rise to an initial position in a furnace chamber at the rate of 2mm/s to 4mm/s, then, heating the temperature to 1,250 DEG C to 1,350 DEG C, carrying out heat preservation for 2 to 5 hours, and then, carrying out cooling at the cooling rate lower than 4 DEG C/min. According to the method, the form of a solid-liquid interface in a silicon material growth process is regulated and controlled by adopting an external static magnetic field, so that a smooth solid-liquid interface is obtained, ideal columnar crystal grain tissue is obtained, and the quality of silicon ingots is improved; and the process is more environmentally friendly, is compatible with the existing technologies of enterprises and is applicable to large-scale production.