The invention relates to a chemical method for preparing a halogenation methylamine lead photoelectric thin film in a large-area manner. The method comprises the steps that a substrate deposited with a simple substance lead thin film and halogenation methylamine are heated under the vacuum or negative pressure condition, a reaction vessel is filled with halogenation methylamine, under the condition at the temperature of 200 DEG C to 300 DED C, the reaction is carried out, the reaction time is smaller than or equal to 50 min, and the halogenation methylamine lead semiconductor thin film material CH3NH3PbX3 with the large grain, good crystallinity and the uniform surface is prepared on the surface of the substrate material in an original manner, X is equal to Cl, Br, I or combination of one or two. According to the method, the halogenation methylamine lead thin film can be rapidly prepared in the large-area manner, the prepared halogenation methylamine lead thin film is good in thickness uniformity, halogenation methylamine lead is good in crystal and large in crystal size, the diameter can reach 0.5 to 2 micrometers, preferably, the diameter can reach one to three micrometers, the problem that in the traditional method, the film formation grain is small is solved, and the method has the wide experiment device research and industrial application prospect.